PART |
Description |
Maker |
WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120 |
Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585
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White Electronic Designs
|
AS29F040 AS29F040-120LC AS29F040-150LC AS29F040-15 |
5V 512K x 8 CMOS flash EEPROM, access time 70ns 5V 512K x 8 CMOS flash EEPROM, access time 55ns 5V 512K x 8 CMOS flash EEPROM, access time 90ns
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ALSC[Alliance Semiconductor Corporation]
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UT6716455PPX UT6716470PPX UT6716455WCA UT6716470WC |
64K SRAM, 8Kx8. 55ns access time Lead finish optional. Prototype flow. 64K SRAM, 8Kx8. 70ns access time Lead finish optional. Prototype flow. 64K SRAM, 8Kx8. 55ns access time Lead finish solder. 64K SRAM, 8Kx8. 70ns access time Lead finish solder. 64K SRAM, 8Kx8. 85ns access time Lead finish solder.
|
Aeroflex Circuit Technology
|
5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM. 15ns access time. Lead finish hot gold. 512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped. 512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow. 512K x 18 SRAM. 15ns access time. Lead finish factory option. 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
|
UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access 8K x 8 CMOS SRAM
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United Microelectronics Corporation ETC UMC[UMC Corporation]
|
M41T81M6 M41T81M6TR M41T81MX6 M41T81MX6T M41T81M6E |
SERIAL ACCESS RTC WITH ALARMS Serial Access Real-Time Clock with Alarms
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M41T00SM6F M41T00S M41T00SM6E |
Serial Access Real-Time Clock
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M41T60 M41T60Q6F |
SERIAL ACCESS REAL-TIME CLOCK
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
M41T63 M41T64 |
Serial Access Real-Time Clock with Alarms
|
ST Microelectronics
|
M41T81M6F |
Serial access Real-Time Clock with alarm 串行访问实时时钟与报
|
STMicroelectronics N.V.
|
5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59 |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option. 512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
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Aeroflex Circuit Technology
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